| PartNumber | 2N3584 | 2N3585 | 2N3583 |
| Description | Bipolar Transistors - BJT NPN High Power | Bipolar Transistors - BJT NPN High Power | Bipolar Transistors - BJT NPN High Power |
| Manufacturer | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-66-2 | TO-66-2 | TO-66-2 |
| Transistor Polarity | NPN | NPN | NPN |
| Collector Emitter Voltage VCEO Max | 250 V | 300 V | 175 V |
| Collector Base Voltage VCBO | 375 V | 500 V | 250 V |
| Emitter Base Voltage VEBO | 6 V | 6 V | 6 V |
| Collector Emitter Saturation Voltage | 750 mV | 750 mV | 5 V |
| Maximum DC Collector Current | 2 A | 2 A | 1 A |
| Gain Bandwidth Product fT | 10 MHz | 10 MHz | 10 MHz |
| Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
| Series | 2N3584 | 2N3585 | 2N3583 |
| Packaging | Tube | Tube | Tube |
| Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| DC Collector/Base Gain hfe Min | 25 at 1 A, 10 V | 25 at 1 A, 10 V | - |
| Pd Power Dissipation | 35 W | 35 W | 35 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 2N3584 PBFREE | 2N3585 PBFREE | 2N3583 PBFREE |
| Unit Weight | 0.206000 oz | 0.206000 oz | 0.206000 oz |
| Continuous Collector Current | - | - | 1 A |