 |  |  | |
| PartNumber | 2N3810U | 2N3810U/TR | 2N3810UJANTX |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | |
| Manufacturer | Microchip | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | N | N | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-78-6 | LCC-6 | - |
| Packaging | Bulk | Reel | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Technology | - | Si | - |
| Transistor Polarity | - | PNP | - |
| Configuration | - | Dual | - |
| Collector Emitter Voltage VCEO Max | - | 60 V | - |
| Collector Base Voltage VCBO | - | 60 V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| Collector Emitter Saturation Voltage | - | 0.2 V | - |
| Maximum DC Collector Current | - | 50 mA | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 450 at 100 uA, 5 V | - |
| DC Collector/Base Gain hfe Min | - | 100 at 10 uA, 5 V | - |
| Pd Power Dissipation | - | 350 mW | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
2N3810U | Bipolar Transistors - BJT Small-Signal BJT | |
| 2N3810U/TR | Bipolar Transistors - BJT | ||
| 2N3810U | Trans GP BJT PNP 60V 0.05A 6-Pin Case U | ||
| 2N3810UJANTX | 신규 및 오리지널 |