 |  |  | |
| PartNumber | 2N5581 | 2N5581/TR | 2N5578 |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | |
| Manufacturer | Microchip | Microchip | Microsemi Corporation |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single |
| RoHS | N | N | - |
| Packaging | Foil Bag | Reel | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Technology | - | Si | - |
| Mounting Style | - | Through Hole | - |
| Package / Case | - | TO-206AB-3 | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| Collector Base Voltage VCBO | - | 75 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| Collector Emitter Saturation Voltage | - | 0.3 V | - |
| Maximum DC Collector Current | - | 800 mA | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 120 at 150 mA, 10 V | - |
| DC Collector/Base Gain hfe Min | - | 20 at 500 mA, 10 V | - |
| Pd Power Dissipation | - | 2 W | - |
| Series | - | - | - |
| Package Case | - | - | - |
| Mounting Type | - | - | - |
| Supplier Device Package | - | - | - |
| Power Max | - | - | - |
| Transistor Type | - | - | - |
| Current Collector Ic Max | - | - | - |
| Voltage Collector Emitter Breakdown Max | - | - | - |
| DC Current Gain hFE Min Ic Vce | - | - | - |
| Vce Saturation Max Ib Ic | - | - | - |
| Current Collector Cutoff Max | - | - | - |
| Frequency Transition | - | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
2N5582 | Bipolar Transistors - BJT Small-Signal BJT | |
| 2N5581 | Bipolar Transistors - BJT Small-Signal BJT | ||
| 2N5582/TR | Bipolar Transistors - BJT | ||
| 2N5581/TR | Bipolar Transistors - BJT | ||
| 2N5578 | 신규 및 오리지널 | ||
| 2N5582 | TRANS NPN 50V 0.8A TO-46 | ||
| 2N5559 | 신규 및 오리지널 | ||
| 2N5562 | 신규 및 오리지널 | ||
| 2N5566 | 신규 및 오리지널 | ||
| 2N5566-YEW | 신규 및 오리지널 | ||
| 2N5568 | 신규 및 오리지널 | ||
| 2N5571 | 신규 및 오리지널 | ||
| 2N5572 | 신규 및 오리지널 | ||
| 2N5574 | TRIAC,400V V(DRM),10A I(T)RMS,TO-208var1/4 RoHS Compliant: Yes | ||
| 2N5576 | 신규 및 오리지널 | ||
| 2N5579 | 신규 및 오리지널 | ||
| 2N5590 | VHF BAND, Si, NPN, RF POWER TRANSISTOR | ||
| 2N5591 | Bipolar Junction Transistor, NPN Type, STX-8 | ||
| 2N5564 | TRANSISTOR, Breakdown Voltage Vbr:-40V, Zero Gate Voltage Drain Current Idss Min:-, Zero Gate Voltage Drain Current Idss Max:30mA, Gate-Source Cutoff Voltage Vgs(off) Max:-3V, Transistor Type:JFE | ||
| 2N5565 | JFET 40V 5mA | ||
| 2N557 | 신규 및 오리지널 | ||
| 2N5573 | TO 48 15 Amp Triac | ||
| 2N5589 | INSTOCK | ||
| 2N5583 | Bipolar Junction Transistor, PNP Type, TO-39 | ||
| 2N5598 | - Bulk (Alt: 2N5598) |