2N6341 stock, 2N6341, 2N6341G


PartNumber	2N6341G	2N6341	2N6341G.
Description	Bipolar Transistors - BJT 25A 150V 200W NPN	Bipolar Transistors - BJT Power BJT	Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:150V, Transition Frequency ft:40MHz, Power Dissipation Pd:200W, DC Collector Current:25A, DC Current Gain hFE:40hFE, No. of Pins:2Pins
Manufacturer	ON Semiconductor	Microchip	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	N	-
Mounting Style	Through Hole	-	-
Package / Case	TO-204-2	-	-
Transistor Polarity	NPN	-	-
Configuration	Single	-	-
Collector Emitter Voltage VCEO Max	150 V	-	-
Collector Base Voltage VCBO	180 V	-	-
Emitter Base Voltage VEBO	6 V	-	-
Collector Emitter Saturation Voltage	1.8 V	-	-
Maximum DC Collector Current	25 A	-	-
Gain Bandwidth Product fT	40 MHz	-	-
Minimum Operating Temperature	- 65 C	-	-
Maximum Operating Temperature	+ 150 C	-	-
Series	2N6341	-	-
Height	8.51 mm	-	-
Length	39.37 mm	-	-
Packaging	Tray	Tray	-
Width	26.67 mm	-	-
Brand	ON Semiconductor	Microchip / Microsemi	-
Continuous Collector Current	25 A	-	-
DC Collector/Base Gain hfe Min	50	-	-
Pd Power Dissipation	200 W	-	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	100	1	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.056438 oz	-	-

Search Part Number : "2N6341", Match & Start with "2N6341" - Total : 5

제조사	부분 #	설명
	2N6341G	Bipolar Transistors - BJT 25A 150V 200W NPN
	2N6341G.	Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:150V, Transition Frequency ft:40MHz, Power Dissipation Pd:200W, DC Collector Current:25A, DC Current Gain hFE:40hFE, No. of Pins:2Pins
Microchip / Microsemi	2N6341	Bipolar Transistors - BJT Power BJT
ON Semiconductor	2N6341	TRANS NPN 150V 25A TO-3
ON Semiconductor	2N6341G	TRANS NPN 150V 25A TO-3

2N6341