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| PartNumber | 2N6519 | 2N6519TA | 2N6519RLRA |
| Description | Bipolar Transistors - BJT . . | Bipolar Transistors - BJT PNP Si Transistor Epitaxial | Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 |
| Manufacturer | Central Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Package / Case | TO-92-3 | TO-92-3 Kinked Lead | - |
| Series | 2N6519 | - | - |
| Packaging | Bulk | Ammo Pack | - |
| Brand | Central Semiconductor | ON Semiconductor / Fairchild | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 2500 | 2000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 2N6519 PBFREE | - | - |
| Mounting Style | - | Through Hole | - |
| Transistor Polarity | - | PNP | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | - 300 V | - |
| Collector Base Voltage VCBO | - | - 300 V | - |
| Emitter Base Voltage VEBO | - | - 5 V | - |
| Maximum DC Collector Current | - | 0.5 A | - |
| Gain Bandwidth Product fT | - | 200 MHz | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| DC Current Gain hFE Max | - | 270 | - |
| Height | - | 5.33 mm (Max) | - |
| Length | - | 5.2 mm (Max) | - |
| Width | - | 4.19 mm (Max) | - |
| Continuous Collector Current | - | - 0.5 A | - |
| DC Collector/Base Gain hfe Min | - | 45 | - |
| Pd Power Dissipation | - | 625000 mW | - |
| Unit Weight | - | 0.008466 oz | - |