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| PartNumber | 2SA1162S-Y,LF(D | 2SA1162S-Y,LF |
| Description | Bipolar Transistors - BJT SM Sig PNP Trans VCEO -50V IC -150mA | |
| Manufacturer | - | Toshiba Semiconductor and Storage |
| Product Category | - | Transistors (BJT) - Single, Pre-Biased |
| Series | - | - |
| Packaging | - | Digi-ReelR Alternate Packaging |
| Package Case | - | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | - | Surface Mount |
| Supplier Device Package | - | S-Mini |
| Power Max | - | 150mW |
| Transistor Type | - | PNP |
| Current Collector Ic Max | - | 150mA |
| Voltage Collector Emitter Breakdown Max | - | 50V |
| DC Current Gain hFE Min Ic Vce | - | 70 @ 2mA, 6V |
| Vce Saturation Max Ib Ic | - | 300mV @ 10mA, 100mA |
| Current Collector Cutoff Max | - | 100nA (ICBO) |
| Frequency Transition | - | 80MHz |