 |  | | |
| PartNumber | 2SC4915-O,LF | 2SC4915-O | 2SC4915-OLFCT-ND |
| Description | Bipolar Transistors - BJT Radio-Frequency Bipolar Transistor | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-416-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 30 V | - | - |
| Collector Base Voltage VCBO | 40 V | - | - |
| Emitter Base Voltage VEBO | 4 V | - | - |
| Maximum DC Collector Current | 20 mA | - | - |
| Gain Bandwidth Product fT | 550 MHz | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Series | 2SC4915 | - | - |
| DC Current Gain hFE Max | 200 at 1 mA, 6 V | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| DC Collector/Base Gain hfe Min | 40 at 1 nA, 6 V | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000212 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Toshiba |
2SC4915-O,LF | Bipolar Transistors - BJT Radio-Frequency Bipolar Transistor | |
| 2SC4915-O | 신규 및 오리지널 | ||
| 2SC4915-OLFCT-ND | 신규 및 오리지널 | ||
| 2SC4915-OLFDKR-ND | 신규 및 오리지널 | ||
| 2SC4915-OLFTR-ND | 신규 및 오리지널 |