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| PartNumber | 2SC6096-TD-H | 2SC6096-TD-E | 2SC6096 |
| Description | Bipolar Transistors - BJT BIP NPN 2A 100V | Bipolar Transistors - BJT BIP NPN 2A 100V | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-89-3 | PCP-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 100 V | 100 V | - |
| Collector Base Voltage VCBO | 120 V | 120 V | - |
| Emitter Base Voltage VEBO | 6.5 V | 6.5 V | - |
| Collector Emitter Saturation Voltage | 100 mV | 100 mV | - |
| Maximum DC Collector Current | 3 A | 3 A | - |
| Gain Bandwidth Product fT | 300 MHz | 300 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | 2SC6096 | 2SC6096 | - |
| DC Current Gain hFE Max | 600 | 600 at 100 mA, 5 V | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 2 A | - | - |
| Pd Power Dissipation | 3.5 W | 3.5 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.004603 oz | 0.001817 oz | - |
| DC Collector/Base Gain hfe Min | - | 300 at 100 mA, 5 V | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| 2SC6096-TD-H | Bipolar Transistors - BJT BIP NPN 2A 100V | ||
| 2SC6096-TD-E | Bipolar Transistors - BJT BIP NPN 2A 100V | ||
| 2SC6096 | 신규 및 오리지널 | ||
ON Semiconductor |
2SC6096-TD-H | Bipolar Transistors - BJT BIP NPN 2A 100V | |
| 2SC6096-TD-E | TRANS NPN 100V 2A SOT89-3 |