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| PartNumber | 2SK4066-DL-1E | 2SK4066-DL-E | 2SK4066-DL-1EX |
| Description | IGBT Transistors MOSFET NCH 4V DRIVE SERIES | RF Bipolar Transistors MOSFET POWER MOSFET | MOSFET N-CH 60V TO263-2 |
| Manufacturer | ON Semiconductor | SANYO/ON | - |
| Product Category | Transistors - FETs, MOSFETs - Single | FETs - Single | - |
| Series | 2SK4066 | - | - |
| Packaging | Reel | Reel | - |
| Unit Weight | 0.073511 oz | 0.139332 oz | - |
| Package Case | TO-262-3 | TO-252-3 | - |
| Technology | Si | Si | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Rds On Drain Source Resistance | 4.7 mOhms | 3.6 mOhms | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Mounting Style | - | SMD/SMT | - |
| Configuration | - | Single | - |
| Pd Power Dissipation | - | 1.65 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor |
2SK4066-DL-1E | IGBT Transistors MOSFET NCH 4V DRIVE SERIES | |
| 2SK4066-DL-E | RF Bipolar Transistors MOSFET POWER MOSFET | ||
| 2SK4066-DL-1EX | MOSFET N-CH 60V TO263-2 |