A2T23 stock, A2T23, A2T23H200W23SR6


PartNumber	A2T23H200W23SR6	A2T23H300-24SR6	A2T23H160-24SR3
Description	RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 51 W Avg., 28 V	RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR, 2300-2400 MHz, 69 W Avg., 28 V	RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 28 W Avg., 28 V
Manufacturer	NXP	NXP	NXP
Product Category	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
RoHS	Y	Y	Y
Transistor Polarity	Dual N-Channel	-	-
Technology	Si	Si	Si
Id Continuous Drain Current	1.8 A	-	-
Vds Drain Source Breakdown Voltage	- 500 mV, 65 V	-	-
Gain	15.5 dB	-	-
Output Power	51 W	-	-
Minimum Operating Temperature	- 40 C	-	-
Maximum Operating Temperature	+ 150 C	-	-
Mounting Style	SMD/SMT	-	-
Package / Case	ACP-1230S-4	-	-
Packaging	Reel	Reel	Reel
Operating Frequency	2300 MHz to 2400 MHz	-	-
Type	RF Power MOSFET	-	-
Brand	NXP Semiconductors	NXP / Freescale	NXP / Freescale
Number of Channels	2 Channel	-	-
Product Type	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
Factory Pack Quantity	150	150	250
Subcategory	MOSFETs	MOSFETs	MOSFETs
Vgs Gate Source Voltage	- 6 V, 10 V	-	-
Vgs th Gate Source Threshold Voltage	2.1 V	-	-
Part # Aliases	935347117128	935322359128	935326016128
Unit Weight	0 oz	0.303504 oz	0.164793 oz

Search Part Number : "A2T23", Match & Start with "A2T23" - Total : 10

제조사	부분 #	설명
NXP Semiconductors	A2T23H200W23SR6	RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 51 W Avg., 28 V
	A2T23H300-24SR6	IC TRANS RF LDMOS
	A2T23H160-24SR3	IC TRANS RF LDMOS
	A2T23H200W23SR6	RF POWER TRANSISTOR
NXP / Freescale	A2T23H300-24SR6	RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR, 2300-2400 MHz, 69 W Avg., 28 V
NXP / Freescale	A2T23H160-24SR3	RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 28 W Avg., 28 V
	A2T2380	신규 및 오리지널
	A2T23H160-24S	신규 및 오리지널
	A2T23H160-24SR6	신규 및 오리지널
	A2T23H300-24S	신규 및 오리지널

A2T23