 |  | | |
| PartNumber | A3G18H500-04SR3 | A3G18H500-04S | A3G1GE3CFF |
| Description | RF MOSFET Transistors Airfast RF Power GaN Transistor, 1805-1880 MHz, 107 W Avg., 48 V | ||
| Manufacturer | NXP | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | Dual N-Channel | - | - |
| Technology | Si | - | - |
| Id Continuous Drain Current | 200 mA | - | - |
| Vds Drain Source Breakdown Voltage | 125 V | - | - |
| Gain | 15.4 dB | - | - |
| Output Power | 107 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | NI-780S-4L | - | - |
| Packaging | Reel | - | - |
| Operating Frequency | 1805 MHz to 1880 MHz | - | - |
| Type | RF Power MOSFET | - | - |
| Brand | NXP Semiconductors | - | - |
| Number of Channels | 2 Channel | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | - 8 V | - | - |
| Vgs th Gate Source Threshold Voltage | - 2.3 V | - | - |
| Part # Aliases | 935351522128 | - | - |
| Unit Weight | 0.116623 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
NXP Semiconductors |
A3G18H500-04SR3 | RF MOSFET Transistors Airfast RF Power GaN Transistor, 1805-1880 MHz, 107 W Avg., 48 V | |
| A3G18H500-04SR3 | RF MOSFET LDMOS 48V NI-780S-4L | ||
| A3G18H500-04S | 신규 및 오리지널 | ||
| A3G1GE3CFF | 신규 및 오리지널 |