 |  |  | |
| PartNumber | AC857BSQ-7 | AC857BQ-7 | AC857BQTA |
| Description | Bipolar Transistors - BJT General Purpose Transistor | Bipolar Transistors - BJT General Purpose Transistor | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Dual | Single | - |
| Collector Emitter Voltage VCEO Max | - 45 V | - 45 V | - |
| Collector Base Voltage VCBO | - 50 V | - 50 V | - |
| Emitter Base Voltage VEBO | - 5 V | - 5 V | - |
| Collector Emitter Saturation Voltage | - 400 mV | - 650 mV | - |
| Maximum DC Collector Current | - 200 mA | - 200 mA | - |
| Gain Bandwidth Product fT | 100 MHz | 200 MHz | - |
| Minimum Operating Temperature | - 55 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| DC Current Gain hFE Max | 475 | 475 | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Continuous Collector Current | - 100 mA | - 100 mA | - |
| Pd Power Dissipation | 200 mW | 350 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Technology | - | Si | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Diodes Incorporated |
AC857BSQ-7 | Bipolar Transistors - BJT General Purpose Transistor | |
| AC857BQ-7 | Bipolar Transistors - BJT General Purpose Transistor | ||
| AC857BSQ-7 | GENERAL PURPOSE TRANSISTOR SOT36 | ||
| AC857BQ-7 | General Purpose Transistor SOT23 T&R 3K | ||
| AC857BQTA | 신규 및 오리지널 |