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| PartNumber | ALD110808PCL | ALD110808ASCL | ALD110808APCL |
| Description | MOSFET Quad EPAD(R) N-Ch | MOSFET Quad EPAD(R) N-Ch | MOSFET Quad EPAD(R) N-Ch |
| Manufacturer | - | Advanced Linear Devices | Advanced Linear Devices |
| Product Category | - | MOSFET | MOSFET |
| Shipping Restrictions | - | ||
| RoHS | - | Y | Y |
| Technology | - | Si | Si |
| Mounting Style | - | SMD/SMT | Through Hole |
| Package / Case | - | SOIC-16 | PDIP-16 |
| Number of Channels | - | 4 Channel | 4 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 10 V | 10 V |
| Id Continuous Drain Current | - | 12 mA | 12 mA |
| Rds On Drain Source Resistance | - | 500 Ohms | 500 Ohms |
| Vgs Gate Source Voltage | - | 10.6 V | 10.6 V |
| Minimum Operating Temperature | - | 0 C | 0 C |
| Maximum Operating Temperature | - | + 70 C | + 70 C |
| Pd Power Dissipation | - | 500 mW (1/2 W) | 500 mW (1/2 W) |
| Configuration | - | Quad | Quad |
| Channel Mode | - | Depletion | Depletion |
| Packaging | - | Tube | Tube |
| Product | - | MOSFET Small Signal | MOSFET Small Signal |
| Series | - | ALD110808A | ALD110808A |
| Transistor Type | - | 4 N-Channel | 4 N-Channel |
| Type | - | MOSFET | MOSFET |
| Brand | - | Advanced Linear Devices | Advanced Linear Devices |
| Forward Transconductance Min | - | 0.0014 S | 0.0014 S |
| Product Type | - | MOSFET | MOSFET |
| Factory Pack Quantity | - | 50 | 25 |
| Subcategory | - | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | - | 10 ns | 10 ns |
| Typical Turn On Delay Time | - | 10 ns | 10 ns |
| Unit Weight | - | 0.023492 oz | 0.036156 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Advanced Linear Devices |
ALD110808PCL | MOSFET Quad EPAD(R) N-Ch | |
| ALD110808ASCL | MOSFET Quad EPAD(R) N-Ch | ||
| ALD110808APCL | MOSFET Quad EPAD(R) N-Ch | ||
| ALD110808SCL | MOSFET Quad EPAD(R) N-Ch | ||
| ALD110808ASCL | MOSFET 4N-CH 10.6V 16SOIC |