ALD11193

ALD111933SAL vs ALD111933MAL vs ALD111933PAL

 
PartNumberALD111933SALALD111933MALALD111933PAL
DescriptionMOSFET Dual N-ChannelMOSFET Dual N-ChannelMOSFET Dual N-Channel
ManufacturerAdvanced Linear DevicesAdvanced Linear DevicesAdvanced Linear Devices
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTThrough Hole
Package / CaseSOIC-8MSOP-8PDIP-8
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage10 V10 V10 V
Id Continuous Drain Current6.9 mA6.9 mA6.9 mA
Rds On Drain Source Resistance500 Ohms500 Ohms500 Ohms
Vgs th Gate Source Threshold Voltage3.25 V-3.25 V
Vgs Gate Source Voltage10.6 V10.6 V10.6 V
Minimum Operating Temperature0 C0 C0 C
Maximum Operating Temperature+ 70 C+ 70 C+ 70 C
Pd Power Dissipation500 mW500 mW (1/2 W)500 mW
ConfigurationDualDualDual
Channel ModeEnhancementDepletionEnhancement
PackagingTubeTubeTube
ProductMOSFET Small SignalMOSFET Small SignalMOSFET Small Signal
SeriesALD111933SALD111933MALD111933P
Transistor Type2 N-Channel2 N-Channel2 N-Channel
TypeMOSFETMOSFETMOSFET
BrandAdvanced Linear DevicesAdvanced Linear DevicesAdvanced Linear Devices
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time10 ns10 ns10 ns
Typical Turn On Delay Time10 ns10 ns10 ns
Unit Weight0.002998 oz0.004938 oz0.032805 oz
Forward Transconductance Min-0.0014 S-
제조사 부분 # 설명 RFQ
Advanced Linear Devices
Advanced Linear Devices
ALD111933SAL MOSFET Dual N-Channel
ALD111933MAL MOSFET Dual N-Channel
ALD111933PAL MOSFET Dual N-Channel
ALD111933PAL MOSFET 2N-CH 10.6V 8DIP
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