 | | | |
| PartNumber | APTGF100A120T3WG | APTGF100A120TG | APTGF100DU120TG |
| Description | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Dual | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 3.2 V | 3.2 V | 3.2 V |
| Continuous Collector Current at 25 C | 130 A | 135 A | 135 A |
| Gate Emitter Leakage Current | 600 nA | 150 nA | 150 nA |
| Pd Power Dissipation | 657 W | 568 W | 568 W |
| Package / Case | SP3-32 | SP4 | SP4 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | - | 3.880136 oz | 3.880136 oz |
| Technology | - | - | Si |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGF100A120T3WG | IGBT Modules Power Module - IGBT | |
| APTGF100A120TG | IGBT Modules Power Module - IGBT | ||
| APTGF100DU120TG | IGBT Modules Power Module - IGBT | ||
| APTGF100A120TG | POWER IGBT TRANSISTOR | ||
| APTGF100A120DTWG | POWER IGBT TRANSISTOR | ||
| APTGF100A120D1G | 신규 및 오리지널 | ||
| APTGF100A120T | 신규 및 오리지널 |