 | | | |
| PartNumber | APTGL60DDA120T3G | APTGL60H120T3G | APTGL60DH120T3G |
| Description | IGBT Modules CC3097 | IGBT Modules CC3142 | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Dual | Full Bridge | Dual |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 1.85 V | 1.85 V | 1.85 V |
| Continuous Collector Current at 25 C | 80 A | 80 A | 80 A |
| Gate Emitter Leakage Current | 400 nA | 400 nA | 400 nA |
| Pd Power Dissipation | 280 W | 280 W | 280 W |
| Package / Case | SP3-32 | SP3-32 | SP3-32 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
| Packaging | Tube | Tube | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Technology | - | - | Si |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGL60DDA120T3G | IGBT Modules CC3097 | |
| APTGL60TL120T3G | IGBT Modules CC3088 | ||
| APTGL60H120T3G | IGBT Modules CC3142 | ||
| APTGL60DH120T3G | IGBT Modules Power Module - IGBT |