 | | | |
| PartNumber | APTGT35A120T1G | APTGT35H120T3G | APTGT35X120T3G |
| Description | IGBT Modules Trench Field Stop 1200V 55A 208W | IGBT Modules DOR CC3052 | IGBT Modules CC3074 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Dual | Full Bridge | 3-Phase |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | 1.7 V |
| Continuous Collector Current at 25 C | 55 A | 55 A | 55 A |
| Gate Emitter Leakage Current | 400 nA | 400 nA | 400 nA |
| Pd Power Dissipation | 208 W | 208 W | 208 W |
| Package / Case | SP1-12 | SP3-32 | SP3-32 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 2.821917 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT35A120T1G | IGBT Modules Trench Field Stop 1200V 55A 208W | |
| APTGT35H120T3G | IGBT Modules DOR CC3052 | ||
| APTGT35X120T3G | IGBT Modules CC3074 | ||
| APTGT35X120T3G | Trans IGBT Module N-CH 1.2KV 55A 32-Pin Case SP-3 |