 | | | |
| PartNumber | AS4C16M32MD1-5BCNTR | AS4C16M32MD1-5BIN | AS4C16M32MD1-5BCN |
| Description | DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR | DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR | DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR |
| Manufacturer | Alliance Memory | Alliance Memory | Alliance Memory |
| Product Category | DRAM | DRAM | DRAM |
| RoHS | Y | Y | Y |
| Type | SDRAM Mobile - LPDDR1 | SDRAM Mobile - LPDDR1 | SDRAM Mobile - LPDDR1 |
| Organization | 16 M x 16 | 16 M x 16 | 16 M x 16 |
| Series | AS4C16M32MD1 | AS4C16M32MD1 | AS4C16M32MD1 |
| Packaging | Reel | Tray | Tray |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | DRAM | DRAM | DRAM |
| Factory Pack Quantity | 1000 | 160 | 160 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Alliance Memory |
AS4C16M32MSA-6BINTR | DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT | |
| AS4C16M32MD1-5BINTR | DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR | ||
| AS4C1G8D3LA-10BCNTR | DRAM 8G 1Gx8 933MHz 1.35V DDR3 ET | ||
| AS4C1G8MD3L-12BCNTR | DRAM DDR3, 8GB. 1.35V 800MHz,1G x 8 | ||
| AS4C16M32MD1-5BCNTR | DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR | ||
| AS4C16M32SC-7TINTR | DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp | ||
| AS4C1G8D3LA-12BCN | DRAM 8G 1Gx8 800MHz 1.35V DDR3 ET | ||
| AS4C1G8D3LA-12BIN | DRAM 8G 1Gx8 800MHz 1.35V DDR3 IT | ||
| AS4C1G8D3LA-12BCNTR | DRAM 8G 1Gx8 800MHz 1.35V DDR3 ET | ||
| AS4C1G8D3LA-12BINTR | DRAM 8G 1Gx8 800MHz 1.35V DDR3 IT | ||
| AS4C1G8D3LA-10BIN | DRAM 8G 1Gx8 933MHz 1.35V DDR3 IT | ||
| AS4C1G8D3LA-10BCN | DRAM 8G 1Gx8 933MHz 1.35V DDR3 ET | ||
| AS4C16M32SC-7TIN | DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp | ||
| AS4C16M32MSA-6BIN | DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT | ||
| AS4C1G8MD3L-12BCN | DRAM DDR3, 8GB. 1.35V 800MHz,1G x 8 | ||
| AS4C16M32MD1-5BIN | DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR | ||
| AS4C1G8D3LA-10BINTR | DRAM 8G 1Gx8 933MHz 1.35V DDR3 IT | ||
| AS4C16M32MS-6BINTR | DRAM 512M 1.8V 166MHz 16Mx16 LP MSDR | ||
| AS4C16M32MS-7BCN | DRAM 512M 1.8V 133MHz 16Mx16 LP MSDR | ||
| AS4C1G8MD3L-12BCN | IC DRAM 8G PARALLEL 78FBGA | ||
| AS4C16M32MD1-5BINTR | DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR | ||
| AS4C16M32MD1-5BCNTR | IC DRAM 512M PARALLEL 90FBGA | ||
| AS4C16M32MD1-5BCN | DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR | ||
| AS4C16M32MD1-5BIN | DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR | ||
| AS4C16M32SC-7TIN | 512MB SDR 16M x 32 3.3V 54PIN TSOP II 133 MHZ | ||
| AS4C16M32MS-6BIN | IC DRAM 512M PARALLEL 90FBGA | ||
| AS4C16M32MS-6BINTR | IC DRAM 512M PARALLEL 90FBGA | ||
| AS4C16M32MS-7BCN | IC DRAM 512M PARALLEL 90FBGA | ||
| AS4C16M32MS-7BCNTR | IC DRAM 512M PARALLEL 90FBGA | ||
| AS4C16M32MSA-6BIN | IC DRAM 512M PARALLEL 90FBGA | ||
| AS4C16M32MSA-6BINTR | IC DRAM 512M PARALLEL 90FBGA | ||
| AS4C1G8MD3L-12BCNTR | IC DRAM 8G PARALLEL 78FBGA | ||
| AS4C1M165 | 신규 및 오리지널 | ||
| AS4C1M16E5-35JIN | 신규 및 오리지널 | ||
| AS4C1M16E0-60JC | 신규 및 오리지널 | ||
| AS4C1M16E5-45TC | 신규 및 오리지널 | ||
| AS4C1M16E5-50JC | 신규 및 오리지널 | ||
| AS4C1M16E5-50JCN | 신규 및 오리지널 | ||
| AS4C1M16E5-50TC | 신규 및 오리지널 | ||
| AS4C1M16E5-50TCTR | 신규 및 오리지널 | ||
| AS4C1M16E5-50TI | 신규 및 오리지널 | ||
| AS4C1M16E5-60 | 신규 및 오리지널 | ||
| AS4C1M16E5-60J | 신규 및 오리지널 | ||
| AS4C1M16E5-60JC | 신규 및 오리지널 | ||
| AS4C1M16E5-60JC. | 신규 및 오리지널 | ||
| AS4C1M16E5-60JCN | 신규 및 오리지널 | ||
| AS4C1M16E5-60JCTR | 신규 및 오리지널 | ||
| AS4C1M16E5-60JI | 신규 및 오리지널 | ||
| AS4C1M16E5-60TC | 신규 및 오리지널 | ||
| AS4C1M16E5-60TC 28 | 신규 및 오리지널 |