| PartNumber | ATF-52189-TR1 | ATF-52189-BLK | ATF-52189-TR2 |
| Description | RF JFET Transistors Transistor GaAs High Linearity | RF JFET Transistors Transistor GaAs High Linearity | FET RF 7V 2GHZ SOT-89 |
| Manufacturer | Broadcom Limited | AVAGO | - |
| Product Category | RF JFET Transistors | RF FETs | - |
| RoHS | Y | - | - |
| Transistor Type | EpHEMT | EpHEMT | - |
| Technology | GaAs | GaAs | - |
| Gain | 16 dB | 16 dB | - |
| Vds Drain Source Breakdown Voltage | 7 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 5 V to 1 V | - | - |
| Id Continuous Drain Current | 500 mA | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-89 | - | - |
| Packaging | Reel | Bulk | - |
| Configuration | Single Dual Source | Single Dual Source | - |
| Operating Frequency | 2 GHz | 2 GHz | - |
| Product | RF JFET | - | - |
| Type | GaAs EpHEMT | - | - |
| Brand | Broadcom / Avago | - | - |
| Forward Transconductance Min | 1300 mmho | - | - |
| NF Noise Figure | 1.5 dB | - | - |
| P1dB Compression Point | 27 dBm | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.004603 oz | 0.004603 oz | - |
| Package Case | - | SOT-89 | - |
| Pd Power Dissipation | - | 1.5 W | - |
| Id Continuous Drain Current | - | 500 mA | - |
| Vds Drain Source Breakdown Voltage | - | 7 V | - |
| Forward Transconductance Min | - | 1300 mmho | - |
| Vgs Gate Source Breakdown Voltage | - | - 5 V to 1 V | - |
| NF Noise Figure | - | 1.5 dB | - |
| P1dB Compression Point | - | 27 dBm | - |