 |  | | |
| PartNumber | AUIRF2804S-7P | AUIRF2804S | AUIRF2804STRL |
| Description | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 320 A | 270 A | 44 A |
| Rds On Drain Source Resistance | 1.2 mOhms | 2.3 mOhms | 2.3 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 260 nC | 160 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 330 W | 300 W | 300 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Tube | Tube | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon / IR | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 220 S | - | - |
| Fall Time | 100 ns | 130 ns | 130 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 150 ns | 120 ns | 120 ns |
| Factory Pack Quantity | 50 | 1000 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 110 ns | 130 ns | 130 ns |
| Typical Turn On Delay Time | 17 ns | 13 ns | 13 ns |
| Part # Aliases | SP001521640 | SP001520210 | SP001521004 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon / IR |
AUIRF2804S-7P | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | |
Infineon Technologies |
AUIRF2804S | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | |
| AUIRF2804STRL | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | ||
| AUIRF2804STRL7P | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | ||
| AUIRF2804S | RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | ||
| AUIRF2804S-7P | RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | ||
| AUIRF2804STRR7P | RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | ||
| AUIRF2804STRL7P | RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | ||
| AUIRF2804STRL | RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | ||
| AUIRF2804S-7P/AUF2804S-7 | 신규 및 오리지널 | ||
| AUIRF2804S-7PPBF | 신규 및 오리지널 | ||
| AUIRF2804S-7PTRL | 신규 및 오리지널 | ||
| AUIRF2804S. | 신규 및 오리지널 | ||
| AUIRF2804S7P | Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | ||
| AUIRF2804SPBF | 신규 및 오리지널 | ||
| AUIRF2804STRLTRLPBF | 신규 및 오리지널 | ||
| AUIRF2804STRR | AUTOMOTIVE MOSFET 40V, 280A, 2.3 MOHM, 160 NC QG, D2PAK | ||
| AUIRF2804S-7PAUF2804S-7P | 신규 및 오리지널 |