 | |  | |
| PartNumber | AUIRFS4610TRL | AUIRFS4610 | AUIRFS4610TRR |
| Description | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 73 A | 73 A | - |
| Rds On Drain Source Resistance | 14 mOhms | 14 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 90 nC | 90 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 190 W | 190 W | - |
| Configuration | Single | Single | Single Quint Source |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Tube | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 73 S | - | - |
| Fall Time | 70 ns | 70 ns | 70 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 87 ns | 87 ns | 87 ns |
| Factory Pack Quantity | 800 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001520246 | SP001522872 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Channel Mode | - | Enhancement | - |
| Typical Turn Off Delay Time | - | 53 ns | - |
| Typical Turn On Delay Time | - | 18 ns | - |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 190 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 73 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 14 mOhms |
| Qg Gate Charge | - | - | 90 nC |
| Forward Transconductance Min | - | - | 73 S |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
AUIRFS4610TRL | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | |
| AUIRFS4610 | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | ||
| AUIRFS4610 | RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | ||
| AUIRFS4610TRR | RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | ||
| AUIRFS4610TRL | Trans MOSFET N-CH 100V 73A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRFS4610TRL) |