 | |  | |
| PartNumber | AUIRFS8407-7P | AUIRFS8407-7TRL | AUIRFS8407-7TRR |
| Description | MOSFET 40V SGL N-CH HEXFET 1.3mOhms | MOSFET 40V SGL N-CH HEXFET 1.3mOhms | RF Bipolar Transistors MOSFET 40V SGL N-CH HEXFET 1.3mOhms |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-263-7 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 240 A | 240 A | - |
| Rds On Drain Source Resistance | 1.3 mOhms | 1 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.9 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 150 nC | 150 nC | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 230 W | 230 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | CoolIRFet | - | - |
| Packaging | Tube | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Forward Transconductance Min | 122 S | - | - |
| Fall Time | 51 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 62 ns | - | - |
| Factory Pack Quantity | 50 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 78 ns | - | - |
| Typical Turn On Delay Time | 18 ns | - | - |
| Part # Aliases | SP001518052 | SP001516126 | - |
| Unit Weight | 0.056438 oz | 0.056438 oz | 0.056438 oz |
| Package Case | - | - | TO-263-7 |
| Pd Power Dissipation | - | - | 230 W |
| Id Continuous Drain Current | - | - | 240 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Rds On Drain Source Resistance | - | - | 1 mOhms |
| Qg Gate Charge | - | - | 150 nC |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
AUIRFS8407-7P | MOSFET 40V SGL N-CH HEXFET 1.3mOhms | |
| AUIRFS8407-7TRL | RF Bipolar Transistors MOSFET 40V SGL N-CH HEXFET 1.3mOhms | ||
| AUIRFS8407-7TRR | RF Bipolar Transistors MOSFET 40V SGL N-CH HEXFET 1.3mOhms | ||
| AUIRFS8407-7P | MOSFET N-CH 40V 240A AUTO | ||
Infineon / IR |
AUIRFS8407-7TRL | MOSFET 40V SGL N-CH HEXFET 1.3mOhms | |
| AUIRFS8407-7 | 신규 및 오리지널 | ||
| AUIRFS8407-7PPBF | 신규 및 오리지널 | ||
| AUIRFS8407-7PTRRPBF | 신규 및 오리지널 |