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AUIRGR4045DT

AUIRGR4045DTRR vs AUIRGR4045DTRL vs AUIRGR4045DTR

 
PartNumberAUIRGR4045DTRRAUIRGR4045DTRLAUIRGR4045DTR
DescriptionIGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CHIGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CHIGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CH
Manufacturer-Infineon TechnologiesInternational Rectifier
Product Category-IGBTs - SingleIGBTs - Single
Series---
Packaging-Tape & Reel (TR)Reel
Unit Weight-0.012346 oz350 mg
Mounting Style-SMD/SMTSMD/SMT
Package Case-TO-252-3, DPak (2 Leads + Tab), SC-63DPAK-3
Input Type-Standard-
Mounting Type-Surface Mount-
Supplier Device Package-TO-252AA-
Configuration-SingleSingle
Power Max-77W-
Reverse Recovery Time trr-74ns-
Current Collector Ic Max-12A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type-Trench-
Current Collector Pulsed Icm-18A-
Vce on Max Vge Ic-2V @ 15V, 6A-
Switching Energy-56μJ (on), 122μJ (off)-
Gate Charge-19.5nC-
Td on off 25°C-27ns/75ns-
Test Condition-400V, 6A, 47 Ohm, 15V-
Pd Power Dissipation-77 W77 W
Maximum Operating Temperature-+ 150 C+ 150 C
Minimum Operating Temperature-- 40 C- 40 C
Collector Emitter Voltage VCEO Max-600 V600 V
Collector Emitter Saturation Voltage-2 V2 V
Continuous Collector Current at 25 C-12 A12 A
Gate Emitter Leakage Current-+/- 100 nA+/- 100 nA
Maximum Gate Emitter Voltage-+/- 20 V+/- 20 V
Continuous Collector Current Ic Max-12 A12 A
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies 		AUIRGR4045DTRR IGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CH
AUIRGR4045DTRL IGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CH
AUIRGR4045DTR IGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CH
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