 | |  | |
| PartNumber | BC847SH6327XTSA1 | BC847SH6327XT | BC847SH6327 |
| Description | Bipolar Transistors - BJT AF TRANSISTOR | Bipolar Transistors - BJT AF TRANSISTOR | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V | - |
| Collector Base Voltage VCBO | 50 V | 50 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 200 mV | 200 mV | - |
| Maximum DC Collector Current | 200 mA | 200 mA | - |
| Gain Bandwidth Product fT | 250 MHz | 250 MHz | - |
| Minimum Operating Temperature | - 60 C | - 60 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BC847 | - | - |
| DC Current Gain hFE Max | 450 | 450 | - |
| Packaging | Reel | Reel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Continuous Collector Current | 100 mA | 100 mA | - |
| DC Collector/Base Gain hfe Min | 200 | 200 | - |
| Pd Power Dissipation | 250 mW | 250 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 847S BC BC847SH6327XT H6327 SP000747298 | 847S BC BC847SH6327XTSA1 H6327 SP000747298 | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BC847SH6327XTSA1 | Bipolar Transistors - BJT AF TRANSISTOR | |
| BC847SH6327XT | Bipolar Transistors - BJT AF TRANSISTOR | ||
| BC847SH6327XTSA1 | TRANS 2NPN 45V 0.1A SOT363 | ||
| BC847SH6327 | 신규 및 오리지널 | ||
| BC847SH6327XT | Bipolar Transistors - BJT AF TRANSISTOR |