BC856SH

BC856SH6327XTSA1 vs BC856SH6327

 
PartNumberBC856SH6327XTSA1BC856SH6327
DescriptionBipolar Transistors - BJT AF TRANSISTORTransistor: PNP x2, bipolar, 65V, 100mA, 250mW, SOT363
ManufacturerInfineonInfineon Technologies
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Arrays
RoHSY-
Mounting StyleSMD/SMT-
Package / CaseSOT-363-6-
Transistor PolarityPNP-
ConfigurationDual-
Collector Emitter Voltage VCEO Max65 V-
Collector Base Voltage VCBO80 V-
Emitter Base Voltage VEBO5 V-
Collector Emitter Saturation Voltage250 mV-
Maximum DC Collector Current200 mA-
Gain Bandwidth Product fT250 MHz-
Minimum Operating Temperature- 65 C-
Maximum Operating Temperature+ 150 C-
SeriesBC856BC856
DC Current Gain hFE Max630-
PackagingReelTape & Reel (TR)
BrandInfineon Technologies-
Continuous Collector Current100 mA-
DC Collector/Base Gain hfe Min200-
Pd Power Dissipation250 mW-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity3000-
SubcategoryTransistors-
Part # Aliases856S BC BC856SH6327XT H6327 SP000747446-
Unit Weight0.000265 oz-
Part Aliases-856S BC BC856SH6327XT H6327 SP000747446
Package Case-SOT-363-6
Mounting Type-Surface Mount
Supplier Device Package-PG-SOT363-6
Power Max-250mW
Transistor Type-2 PNP (Dual)
Current Collector Ic Max-100mA
Voltage Collector Emitter Breakdown Max-65V
DC Current Gain hFE Min Ic Vce-200 @ 2mA, 5V
Vce Saturation Max Ib Ic-650mV @ 5mA, 100mA
Current Collector Cutoff Max-15nA (ICBO)
Frequency Transition-250MHz
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
BC856SH6327XTSA1 Bipolar Transistors - BJT AF TRANSISTOR
BC856SH6327XTSA1 TRANS 2PNP 65V 0.1A SOT363
BC856SH6327 Transistor: PNP x2, bipolar, 65V, 100mA, 250mW, SOT363
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