| PartNumber | BC857BE6327HTSA1 | BC857BE6433HTMA1 |
| Description | Bipolar Transistors - BJT PNP 45 V 100 mA | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR |
| Manufacturer | Infineon | Infineon |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 |
| Transistor Polarity | PNP | PNP |
| Configuration | Single | Dual |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V |
| Collector Base Voltage VCBO | 50 V | 50 V |
| Emitter Base Voltage VEBO | 5 V | 5 V |
| Collector Emitter Saturation Voltage | 250 mV | 250 mV |
| Maximum DC Collector Current | 200 mA | 200 mA |
| Gain Bandwidth Product fT | 250 MHz | 250 MHz |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | BC857 | BC857 |
| DC Current Gain hFE Max | 475 | 475 |
| Packaging | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies |
| Continuous Collector Current | 100 mA | 100 mA |
| DC Collector/Base Gain hfe Min | 220 | 220 |
| Pd Power Dissipation | 330 mW | 330 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 10000 |
| Subcategory | Transistors | Transistors |
| Part # Aliases | 857B BC BC857BE6327XT E6327 SP000010633 | 857B BC BC857BE6433XT E6433 SP000010648 |
| Unit Weight | 0.000282 oz | 0.000282 oz |