BC857BLT1G

BC857BLT1G vs BC857BLT1G , SC2602S , 9 vs BC857BLT1G,SZBZX84C22ET1

 
PartNumberBC857BLT1GBC857BLT1G , SC2602S , 9BC857BLT1G,SZBZX84C22ET1
DescriptionBipolar Transistors - BJT 100mA 50V PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 45 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 0.65 V--
Maximum DC Collector Current0.1 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesBC857BL--
Height0.94 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current- 0.1 A--
DC Collector/Base Gain hfe Min220--
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
제조사 부분 # 설명 RFQ
BC857BLT1G Bipolar Transistors - BJT 100mA 50V PNP
BC857BLT1G-CUT TAPE 신규 및 오리지널
BC857BLT1G , SC2602S , 9 신규 및 오리지널
BC857BLT1G,SZBZX84C22ET1 신규 및 오리지널
BC857BLT1G/BC857B 신규 및 오리지널
ON Semiconductor
ON Semiconductor
BC857BLT1G Bipolar Transistors - BJT 100mA 50V PNP
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