 |  | |
| PartNumber | BC858BE6327HTSA1 | BC858BE6327 |
| Description | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | Trans GP BJT PNP 30V 0.1A 3-Pin SOT23 T/R (Alt: SP000010634) |
| Manufacturer | Infineon | INFINEON |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23-3 | - |
| Transistor Polarity | PNP | - |
| Configuration | Dual | - |
| Collector Emitter Voltage VCEO Max | 30 V | - |
| Collector Base Voltage VCBO | 30 V | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Collector Emitter Saturation Voltage | 250 mV | - |
| Maximum DC Collector Current | 200 mA | - |
| Gain Bandwidth Product fT | 250 MHz | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | BC858 | - |
| DC Current Gain hFE Max | 450 | - |
| Packaging | Reel | - |
| Brand | Infineon Technologies | - |
| Continuous Collector Current | 100 mA | - |
| DC Collector/Base Gain hfe Min | 200 | - |
| Pd Power Dissipation | 330 mW | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 858B BC BC858BE6327XT E6327 SP000010634 | - |
| Unit Weight | 0.000282 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BC858BE6327HTSA1 | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | |
| BC858BE6327HTSA1 | TRANS PNP 30V 0.1A SOT-23 | ||
| BC858BE6327 | Trans GP BJT PNP 30V 0.1A 3-Pin SOT23 T/R (Alt: SP000010634) |