BC859BLT1

BC859BLT1G vs BC859BLT1

 
PartNumberBC859BLT1GBC859BLT1
DescriptionBipolar Transistors - BJT 100mA 30V PNPTRANS PNP 30V 0.1A SOT-23
ManufacturerON SemiconductorON
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single
RoHSY-
Mounting StyleSMD/SMT-
Package / CaseSOT-23-3-
Transistor PolarityPNP-
ConfigurationSingle-
Collector Emitter Voltage VCEO Max- 45 V-
Collector Base Voltage VCBO- 50 V-
Emitter Base Voltage VEBO5 V-
Collector Emitter Saturation Voltage- 0.65 V-
Maximum DC Collector Current0.1 A-
Gain Bandwidth Product fT100 MHz-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Height0.94 mm-
Length2.9 mm-
PackagingReel-
Width1.3 mm-
BrandON Semiconductor-
Continuous Collector Current- 0.1 A-
DC Collector/Base Gain hfe Min220-
Pd Power Dissipation225 mW-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity3000-
SubcategoryTransistors-
Unit Weight0.000282 oz-
제조사 부분 # 설명 RFQ
ON Semiconductor
ON Semiconductor
BC859BLT1G Bipolar Transistors - BJT 100mA 30V PNP
BC859BLT1 TRANS PNP 30V 0.1A SOT-23
BC859BLT1G TRANS PNP 30V 0.1A SOT-23
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