 |  | | |
| PartNumber | BCV62AE6327HTSA1 | BCV62AE6327 | BCV62AE6327 , MAX1605ETT |
| Description | Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A | ||
| Manufacturer | Infineon | GP/INFINEON | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Arrays | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-143-4 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 30 V | - | - |
| Collector Base Voltage VCBO | 30 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 250 mV | - | - |
| Maximum DC Collector Current | 200 mA | - | - |
| Gain Bandwidth Product fT | 250 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BCV62 | - | - |
| DC Current Gain hFE Max | 220 | - | - |
| Packaging | Reel | - | - |
| Brand | Infineon Technologies | - | - |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 125 | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 62A BCV BCV62AE6327XT E6327 SP000010889 | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BCV62AE6327HTSA1 | Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A | |
| BCV62AE6327 | 신규 및 오리지널 | ||
| BCV62AE6327 , MAX1605ETT | 신규 및 오리지널 | ||
| BCV62AE6327HTSA1 | TRANS 2PNP 30V 0.1A SOT143 |