 |  | |
| PartNumber | BCW66KHE6327HTSA1 | BCW66KHE6327 |
| Description | Bipolar Transistors - BJT NPN 45.0 V 100 mA | TRANSISTOR NPN AF 45V 800MA HFE350 SOT23, RL |
| Manufacturer | Infineon | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23-3 | - |
| Transistor Polarity | NPN | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 45 V | - |
| Collector Base Voltage VCBO | 75 V | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Collector Emitter Saturation Voltage | 0.45 V | - |
| Maximum DC Collector Current | 1 A | - |
| Gain Bandwidth Product fT | 170 MHz | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | BCW66 | - |
| DC Current Gain hFE Max | 630 | - |
| Packaging | Reel | - |
| Brand | Infineon Technologies | - |
| Continuous Collector Current | 800 mA | - |
| DC Collector/Base Gain hfe Min | 250 | - |
| Pd Power Dissipation | 500 mW | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 66KH BCW BCW66KHE6327XT E6327 SP000271906 | - |
| Unit Weight | 0.000282 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BCW66KHE6327HTSA1 | Bipolar Transistors - BJT NPN 45.0 V 100 mA | |
| BCW66KHE6327HTSA1 | TRANS NPN 45V 0.8A SOT-23 | ||
| BCW66KHE6327 | TRANSISTOR NPN AF 45V 800MA HFE350 SOT23, RL |