 |  | |
| PartNumber | BCX55TA | BCX55TA(BE) |
| Description | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K | |
| Manufacturer | Diodes Incorporated | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-89-3 | - |
| Transistor Polarity | NPN | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 60 V | - |
| Collector Base Voltage VCBO | 60 V | - |
| Emitter Base Voltage VEBO | 6 V | - |
| Collector Emitter Saturation Voltage | 500 mV | - |
| Maximum DC Collector Current | 1.5 A | - |
| Gain Bandwidth Product fT | 150 MHz | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | BCX55 | - |
| Height | 1.6 mm | - |
| Length | 4.6 mm | - |
| Packaging | Reel | - |
| Width | 2.6 mm | - |
| Brand | Diodes Incorporated | - |
| DC Collector/Base Gain hfe Min | 25 at 5 mA, 2 V | - |
| Pd Power Dissipation | 1000 mW | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | Transistors | - |
| Unit Weight | 0.001834 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Diodes Incorporated |
BCX55TA | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K | |
NXP Semiconductors |
BCX55TA(BE) | 신규 및 오리지널 | |
| BCX55TA | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K |