PartNumber | BCX5610TA | BCX5610H6327XTSA1 | BCX5616E6327 |
Description | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K | Bipolar Transistors - BJT AF TRANSISTORS | Trans GP BJT NPN 80V 1A 4-Pin(3+Tab) SOT-89 T/R - Bulk (Alt: BCX56-16E6327) |
Manufacturer | Diodes Incorporated | Infineon | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-89-3 | SOT-89-4 | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 80 V | - | - |
Collector Base Voltage VCBO | 100 V | - | - |
Emitter Base Voltage VEBO | 6 V | - | - |
Collector Emitter Saturation Voltage | 500 mV | - | - |
Maximum DC Collector Current | 1 A | - | - |
Gain Bandwidth Product fT | 150 MHz | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | BCX56 | - | - |
DC Current Gain hFE Max | 160 | - | - |
Height | 1.5 mm | - | - |
Length | 4.6 mm | - | - |
Packaging | Reel | Reel | - |
Width | 2.6 mm | - | - |
Brand | Diodes Incorporated | Infineon Technologies | - |
DC Collector/Base Gain hfe Min | 63 | - | - |
Pd Power Dissipation | 1000 mW | - | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.001834 oz | - | - |
Part # Aliases | - | 56-10 BCX H6327 SP001125480 | - |