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| PartNumber | BFR840L3RHESDE6327XTSA1 | BFR840L3RHESDE6327 | BFR840L3RHESDE6327XTSA1-CUT TAPE |
| Description | RF Bipolar Transistors RF BIP TRANSISTORS | ||
| Manufacturer | Infineon | INFINEON | - |
| Product Category | RF Bipolar Transistors | Transistors - Bipolar (BJT) - RF | - |
| RoHS | Y | - | - |
| Series | BFR840L3 | BFR840L3 | - |
| Transistor Type | Bipolar | NPN | - |
| Technology | SiGe | SiGe | - |
| Collector Emitter Voltage VCEO Max | 2.25 V | - | - |
| Emitter Base Voltage VEBO | 2.9 V | - | - |
| Continuous Collector Current | 35 mA | 35 mA | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Configuration | Single | Single | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSLP-3 | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Operating Frequency | 75 GHz | 75 GHz | - |
| Type | RF Silicon Germanium | - | - |
| Brand | Infineon Technologies | - | - |
| Pd Power Dissipation | 75 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 15000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 840L3RHESD BFR BFR84L3RHESDE6327XT E6327 SP000978848 | - | - |
| Part Aliases | - | 840L3RHESD BFR BFR840L3RHESDE6327XT E6327 SP000978848 | - |
| Package Case | - | SC-101, SOT-883 | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | TSLP-3-9 | - |
| Power Max | - | 75mW | - |
| Current Collector Ic Max | - | 35mA | - |
| Voltage Collector Emitter Breakdown Max | - | 2.6V | - |
| DC Current Gain hFE Min Ic Vce | - | 150 @ 10mA, 1.8V | - |
| Frequency Transition | - | 75GHz | - |
| Noise Figure dB Typ f | - | 0.5dB @ 450MHz | - |
| Gain | - | 27dB | - |
| Pd Power Dissipation | - | 75 mW | - |
| Collector Emitter Voltage VCEO Max | - | 2.25 V | - |
| Emitter Base Voltage VEBO | - | 2.9 V | - |