 |  | | |
| PartNumber | BFU590GX | BFU590G | BFU590Q |
| Description | RF Bipolar Transistors NPN wideband silicon RF transistor | ||
| Manufacturer | NXP | NXP Semiconductors | NXP Semiconductors |
| Product Category | RF Bipolar Transistors | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | - | - |
| Transistor Type | Bipolar Wideband | NPN | NPN |
| Technology | Si | Si | Si |
| Transistor Polarity | NPN | NPN | NPN |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Collector Emitter Voltage VCEO Max | 16 V | - | - |
| Emitter Base Voltage VEBO | 2 V | - | - |
| Continuous Collector Current | 80 mA | 80 mA | 80 mA |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Configuration | Single | Dual | Dual |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-4 | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | Digi-ReelR Alternate Packaging |
| Collector Base Voltage VCBO | 24 V | - | - |
| DC Current Gain hFE Max | 130 | - | - |
| Operating Frequency | 900 MHz | 900 MHz | 900 MHz |
| Operating Temperature Range | - 40 C to + 150 C | - | - |
| Type | Wideband RF Transistor | - | - |
| Brand | NXP Semiconductors | - | - |
| Gain Bandwidth Product fT | 8.5 GHz | - | - |
| Maximum DC Collector Current | 300 mA | 300 mA | 300 mA |
| Pd Power Dissipation | 2000 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 934067975115 | - | - |
| Unit Weight | 0.003447 oz | - | - |
| Series | - | NPI Part Build_RF Transistors | NPI Part Build_RF Transistors |
| Package Case | - | TO-261-4, TO-261AA | TO-243AA |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | SC-73 | SOT-89-3 |
| Power Max | - | 2W | 2W |
| Current Collector Ic Max | - | 200mA | 200mA |
| Voltage Collector Emitter Breakdown Max | - | 12V | 12V |
| DC Current Gain hFE Min Ic Vce | - | 60 @ 80mA, 8V | 60 @ 80mA, 8V |
| Frequency Transition | - | 8.5GHz | 8GHz |
| Noise Figure dB Typ f | - | - | - |
| Gain | - | 8dB | 6.5dB |
| Pd Power Dissipation | - | 2000 mW | 2000 mW |
| Collector Emitter Voltage VCEO Max | - | 16 V | 16 V |
| Emitter Base Voltage VEBO | - | 2 V | 2 V |
| DC Collector Base Gain hfe Min | - | 60 | 60 |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
NXP Semiconductors |
BFU590GX | RF Bipolar Transistors NPN wideband silicon RF transistor | |
| BFU590QX | RF Bipolar Transistors NPN wideband silicon RF transistor | ||
| BFU590G | 신규 및 오리지널 | ||
| BFU590Q | 신규 및 오리지널 | ||
| BFU590QX | RF Bipolar Transistors Dual NPN wideband Silicon RFtransisto | ||
| BFU590GX | RF TRANS NPN 12V 8.5GHZ SOT223 | ||
| BFU590GX-CUT TAPE | 신규 및 오리지널 | ||
| BFU590QX-CUT TAPE | 신규 및 오리지널 |