 |  | | |
| PartNumber | BSC059N03S G | BSC059N03S | BSC059N03S-G |
| Description | MOSFET N-Ch 30V 17.5A TDSON-8 | ||
| Manufacturer | Infineon | INFINEON | INFINEON |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 17.5 A | - | - |
| Rds On Drain Source Resistance | 5.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 3.8 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.8 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 22 ns | - | - |
| Typical Turn On Delay Time | 5.7 ns | - | - |
| Part # Aliases | BSC059N03SGXT | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC059N03S G | MOSFET N-Ch 30V 17.5A TDSON-8 | |
| BSC059N03S | 신규 및 오리지널 | ||
| BSC059N03S-G | 신규 및 오리지널 | ||
| BSC059N03SG | 신규 및 오리지널 | ||
| BSC059N03S , TDA8271AHN/ | 신규 및 오리지널 | ||
| BSC059N03SG , TDA8274AHN | 신규 및 오리지널 | ||
| BSC059N03SGATMA1 | 신규 및 오리지널 | ||
| BSC059N03SGINCT | 신규 및 오리지널 | ||
| BSC059N03SGXT | 신규 및 오리지널 | ||
Infineon Technologies |
BSC059N03S G | MOSFET N-CH 30V 73A TDSON-8 | |
| BSC059N03ST | MOSFET N-CH 30V 50A TDSON-8 |