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| PartNumber | BSC0702LSATMA1 | BSC070N10NS3 G | BSC070N10LS5ATMA1 |
| Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | MOSFET TRENCH >=100V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | BSC0702LS SP001589462 | BSC070N10NS3GATMA1 BSC7N1NS3GXT SP000778082 | BSC070N10LS5 SP001861044 |
| Technology | - | Si | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | TDSON-8 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Id Continuous Drain Current | - | 90 A | - |
| Rds On Drain Source Resistance | - | 6.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 55 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 114 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 1.27 mm | - |
| Length | - | 5.9 mm | - |
| Series | - | OptiMOS 3 | BSC070N10 |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 5.15 mm | - |
| Forward Transconductance Min | - | 36 S | - |
| Fall Time | - | 8 ns | - |
| Rise Time | - | 10 ns | - |
| Typical Turn Off Delay Time | - | 29 ns | - |
| Typical Turn On Delay Time | - | 15 ns | - |
| Unit Weight | - | 0.003527 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC0702LSATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| BSC070N10NS3GATMA1 | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | ||
| BSC070N10NS3 G | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | ||
| BSC070N10NS5ATMA1 | MOSFET N-Ch 100V 90A TDSON-8 | ||
| BSC070N10LS5ATMA1 | MOSFET TRENCH >=100V | ||
| BSC0702LSATMA1 | MOSFET N-CH 8TDSON | ||
| BSC070N10NS3GATMA1 | MOSFET N-CH 100V 90A TDSON-8 | ||
| BSC070N10NS5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 100V 90A TDSON-8 | ||
| BSC0702LS | Trans MOSFET N-CH 60V 2.7mOHM 8-Pin TDSON T/R (Alt: BSC0702LS) | ||
| BSC070N10NS | 신규 및 오리지널 | ||
| BSC070N10NS3 G | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | ||
| BSC070N10NS3G | Trans MOSFET N-CH 100V 90A 8-Pin TDSON T/R (Alt: BSC070N10NS3 G) | ||
| BSC070N10NS5 | Trans MOSFET N-CH 100V 90A 8-Pin TDSON T/R (Alt: BSC070N10NS5) | ||
| BSC070N10NS5ATMA1-CUT TAPE | 신규 및 오리지널 | ||
| BSC070N10NS5G | 신규 및 오리지널 |