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| PartNumber | BSC093N04LSGATMA1 | BSC093N04LSGATMA1 , TDZ | BSC093N04LSGATMA1-CUT TAPE |
| Description | MOSFET N-CH 40V 49A TDSON-8 | ||
| Manufacturer | Infineon Technologies | - | - |
| Product Category | FETs - Single | - | - |
| Series | OptiMOS | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Part Aliases | BSC093N04LS BSC093N04LSGXT G SP000387929 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | OptiMOS | - | - |
| Package Case | 8-PowerTDFN | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 1 Channel | - | - |
| Supplier Device Package | PG-TDSON-8 | - | - |
| Configuration | Single | - | - |
| FET Type | MOSFET N-Channel, Metal Oxide | - | - |
| Power Max | 35W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Drain to Source Voltage Vdss | 40V | - | - |
| Input Capacitance Ciss Vds | 1900pF @ 20V | - | - |
| FET Feature | Logic Level Gate | - | - |
| Current Continuous Drain Id 25°C | 13A (Ta), 49A (Tc) | - | - |
| Rds On Max Id Vgs | 9.3 mOhm @ 40A, 10V | - | - |
| Vgs th Max Id | 2V @ 14μA | - | - |
| Gate Charge Qg Vgs | 24nC @ 10V | - | - |
| Pd Power Dissipation | 35 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 2.8 ns | - | - |
| Rise Time | 2.4 ns | - | - |
| Vgs Gate Source Voltage | +/- 20 V | - | - |
| Id Continuous Drain Current | 49 A | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Rds On Drain Source Resistance | 9.3 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 16 ns | - | - |
| Typical Turn On Delay Time | 3.6 ns | - | - |
| Qg Gate Charge | 18 nC | - | - |
| Forward Transconductance Min | 67 S | - | - |
| Channel Mode | Enhancement | - | - |