 | | | |
| PartNumber | BSG0813ND | BSG0813ND1 | BSG0813NDATMA1 |
| Description | |||
| Manufacturer | Infineon Technologies | - | - |
| Product Category | FETs - Arrays | - | - |
| Series | * | - | - |
| Packaging | Tape & Reel (TR) | - | - |
| Part Aliases | BSG0813NDI SP001241676 | - | - |
| Package Case | 8-PowerTDFN | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 155°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Supplier Device Package | PG-TISON-8 | - | - |
| FET Type | 2 N-Channel (Dual) Asymmetrical | - | - |
| Power Max | 2.5W | - | - |
| Drain to Source Voltage Vdss | 25V | - | - |
| Input Capacitance Ciss Vds | 1100pF @ 12V | - | - |
| FET Feature | Logic Level Gate, 4.5V Drive | - | - |
| Current Continuous Drain Id 25°C | 19A, 33A | - | - |
| Rds On Max Id Vgs | 3 mOhm @ 20A, 10V | - | - |
| Vgs th Max Id | 2V @ 250μA | - | - |
| Gate Charge Qg Vgs | 8.4nC @ 4.5V | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSG0813NDIATMA1 | MOSFET LV POWER MOS | |
| BSG0813NDIATMA1 | MOSFET 2N-CH 25V 19A/33A 8TISON | ||
| BSG0813ND | 신규 및 오리지널 | ||
| BSG0813ND1 | 신규 및 오리지널 | ||
| BSG0813NDATMA1 | 신규 및 오리지널 | ||
| BSG0813NDI | 신규 및 오리지널 | ||
| BSG0813NDIATMA1INFINEON- | 신규 및 오리지널 | ||
| BSG0813NDIATMA1-CUT TAPE | 신규 및 오리지널 |