 | | | |
| PartNumber | BSH203,215 | BSH201,215 | BSH202,215 |
| Description | MOSFET TAPE7 MOSFET | MOSFET TAPE7 MOSFET | MOSFET TAPE7 MOSFET |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 60 V | 30 V |
| Id Continuous Drain Current | 470 mA | 300 mA | 520 mA |
| Rds On Drain Source Resistance | 900 mOhms | 2.5 Ohms | 900 mOhms |
| Vgs th Gate Source Threshold Voltage | 400 mV | 1 V | 1 V |
| Vgs Gate Source Voltage | 4.5 V | 10 V | 10 V |
| Qg Gate Charge | 2.2 nC | 3 nC | 2.9 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 417 mW | 417 mW | 0.417 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1 mm | 1 mm | 1 mm |
| Length | 3 mm | 3 mm | 3 mm |
| Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
| Transistor Type | 1 P-Channel MOS Transistor | 1 P-Channel MOS Transistor | 1 P-Channel |
| Width | 1.4 mm | 1.4 mm | 1.4 mm |
| Brand | Nexperia | Nexperia | Nexperia |
| Forward Transconductance Min | 0.3 S | 0.1 S | - |
| Fall Time | 20 ns | 20 ns | 20 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4.5 ns | 4.5 ns | 4.5 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | 45 ns | 45 ns |
| Typical Turn On Delay Time | 2 ns | 2 ns | 2 ns |
| Part # Aliases | BSH203 T/R | BSH201 T/R | BSH202 T/R |
| Unit Weight | 0.000282 oz | 0.000882 oz | 0.000282 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Nexperia |
BSH205G2R | MOSFET 20V P-channel Trench MOSFET | |
| BSH203,215 | MOSFET TAPE7 MOSFET | ||
| BSH201,215 | MOSFET TAPE7 MOSFET | ||
| BSH202,215 | MOSFET TAPE7 MOSFET | ||
| BSH205G2VL | MOSFET BSH205G2/TO-236AB/REEL 11" Q3/ | ||
| BSH202,215 | MOSFET P-CH 30V 520MA SOT23 | ||
| BSH205G2R | MOSFET P-CH 20V 2A SOT23 | ||
| BSH205G2VL | MOSFET P-CH 20V 2.3A TO236AB | ||
| BSH207,135 | MOSFET P-CH 12V 1.52A 6TSOP | ||
| BSH203,215 | MOSFET P-CH 30V 470MA SOT23 | ||
| BSH201,215 | MOSFET P-CH 60V 300MA SOT-23 | ||
| BSH201 | SmallSignalField-EffectTransistor,0.52AI(D),30V,1-Element,P-Channel,Silicon,Metal-oxideSemiconductorFET | ||
| BSH201 , MAX6442KAEIRD3 | 신규 및 오리지널 | ||
| BSH201+215 | Now Nexperia BSH201 - Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH201/WJ6 | 신규 및 오리지널 | ||
| BSH201215 | Now Nexperia BSH201 - Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH202 , MAX6335US22D3 | 신규 및 오리지널 | ||
| BSH202+215 | Now Nexperia BSH202 - Small Signal Field-Effect Transistor, 0.52A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH202215 | Now Nexperia BSH202 - Small Signal Field-Effect Transistor, 0.52A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH203 | Transistor: P-MOSFET, unipolar, -30V, -0.3A, 170mW, SOT23 | ||
| BSH203 , MAX6443US26L | 신규 및 오리지널 | ||
| BSH203(WJ8) | 신규 및 오리지널 | ||
| BSH203.215 | Trans MOSFET P-CH 30V 0.47A 3-Pin TO-236AB T/R | ||
| BSH203/G | 신규 및 오리지널 | ||
| BSH203215 | MOSFET P-CHANNEL 30V 0.47A TO236AB, RL | ||
| BSH203T/R | 신규 및 오리지널 | ||
| BSH204 , TDZGTR6.8 , J26 | 신규 및 오리지널 | ||
| BSH205 | P-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR SOT-23, 3 PIN | ||
| BSH205 / JO | 신규 및 오리지널 | ||
| BSH205 , MAX6035AUR50 | 신규 및 오리지널 | ||
| BSH205 N011 | 신규 및 오리지널 | ||
| BSH205+215 | Now Nexperia BSH205 - Small Signal Field-Effect Transistor, 0.75A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH205,125 | 신규 및 오리지널 | ||
| BSH205/T1 | 신규 및 오리지널 | ||
| BSH205/WJO | 신규 및 오리지널 | ||
| BSH205125 | 신규 및 오리지널 | ||
| BSH205215 | Now Nexperia BSH205 - Small Signal Field-Effect Transistor, 0.75A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH205G2,215 | 신규 및 오리지널 | ||
| BSH205G2215 | Now Nexperia BSH205G2 - Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
| BSH205TR | 신규 및 오리지널 | ||
| BSH206 | Small Signal Field-Effect Transistor, 0.75A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH207 | 신규 및 오리지널 | ||
| BSH207 / A1 | 신규 및 오리지널 | ||
| BSH207(A1) | 신규 및 오리지널 | ||
| BSH207+135 | Now Nexperia BSH207 - Small Signal Field-Effect Transistor, 1.52A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH201,215-CUT TAPE | 신규 및 오리지널 | ||
| BSH203,215-CUT TAPE | 신규 및 오리지널 | ||
| BSH202 | MOSFET, P CHANNEL, 30V, 0.52A, SOT23, Transistor Polarity:P Channel, Continuous Drain Current Id:-520mA, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.63ohm, Rds(on) Test Voltage Vgs:-10 | ||
| BSH205G2 | 20 V, P-CHANNEL TRENCH MOSFET PLASTIC PACAKGE-3 | ||
NXP Semiconductors |
BSH205,215 | MOSFET P-CH 12V 0.75A SOT-23 |