 |  | | |
| PartNumber | BSL303SPEH6327XTSA1 | BSL303SPE | BSL303SPE H6327 |
| Description | MOSFET SMALL SIGNAL+P-CH | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSOP-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 6.3 A | - | - |
| Rds On Drain Source Resistance | 25 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 20.9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 3 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 12.9 S | - | - |
| Fall Time | 8.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.7 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23.7 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Part # Aliases | BSL303SPE H6327 SP000953144 | - | - |
| Unit Weight | 0.000480 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSL303SPEH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSL303SPEH6327XTSA1 | MOSFET P-CH 30V 6.3A TSOP-6 | ||
| BSL303SPE | 신규 및 오리지널 | ||
| BSL303SPE H6327 | 신규 및 오리지널 |