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| PartNumber | BSM100GB120DN2 | BSM100GB120DN2K | BSM100GB120DN2HOSA1 |
| Description | IGBT Modules 1200V 100A DUAL | IGBT Modules 1200V 100A DUAL | IGBT 2 MED POWER 62MM-1 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | Y | N | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Half Bridge | Half Bridge | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Collector Emitter Saturation Voltage | 2.5 V | 2.5 V | - |
| Continuous Collector Current at 25 C | 150 A | 145 A | - |
| Gate Emitter Leakage Current | 200 nA | 400 nA | - |
| Pd Power Dissipation | 800 W | 700 W | - |
| Package / Case | Half Bridge2 | Half Bridge1 | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tray | Tray | - |
| Height | 30 mm | 30.5 mm | - |
| Length | 106.4 mm | 94 mm | - |
| Width | 61.4 mm | 34 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | BSM100GB120DN2HOSA1 SP000100720 | BSM100GB120DN2KHOSA1 SP000101733 | - |