 | | | |
| PartNumber | BSM50GD60DLC | BSM50GD60DLC-E3226 | BSM50GD60DL |
| Description | IGBT Modules 600V 50A 3-PHASE | IGBT Modules 600V 50A 3-PHASE | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | N | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Hex | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2.2 V | - | - |
| Continuous Collector Current at 25 C | 70 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Package / Case | EconoPACK 2A | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Packaging | Tray | - | - |
| Height | 17 mm | - | - |
| Length | 107.5 mm | - | - |
| Width | 45 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | BSM50GD60DLCBOSA1 SP000100391 | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSM50GD60DLC | IGBT Modules 600V 50A 3-PHASE | |
| BSM50GD60DLCBOSA1 | IGBT 2 LOW POWER ECONO2-2 | ||
| BSM50GD60DLC-E3226 | IGBT Modules 600V 50A 3-PHASE | ||
| BSM50GD60DL | 신규 및 오리지널 | ||
| BSM50GD60DLCE3226 | 신규 및 오리지널 | ||
| BSM50GD60DN2 | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES | ||
| BSM50GD60DN2E3226 | 신규 및 오리지널 | ||
| BSM50GD60DLC | IGBT Modules 600V 50A 3-PHASE |