BSS139H63

BSS139H6327XT vs BSS139H6327XTSA1 vs BSS139H6327

 
PartNumberBSS139H6327XTBSS139H6327XTSA1BSS139H6327
DescriptionMOSFET N-Ch 250V 30mA SOT-23-3MOSFET N-Ch 250V 30mA SOT-23-3250V,0.03A,30��,N-Ch Power MOSFET
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3PG-SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage250 V250 V-
Id Continuous Drain Current100 mA100 mA-
Rds On Drain Source Resistance7.8 Ohms14 Ohms-
Vgs th Gate Source Threshold Voltage2.1 V2.1 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge3.5 nC2.3 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation360 mW360 mW-
ConfigurationSingleSingle-
Channel ModeDepletionDepletion-
QualificationAEC-Q101AEC-Q101-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length2.9 mm2.9 mm-
ProductMOSFET Small Signal--
SeriesBSS139--
Transistor Type1 N-Channel1 N-Channel-
Width1.3 mm1.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min60 mS60 mS-
Fall Time182 ns182 ns-
Product TypeMOSFETMOSFET-
Rise Time5.4 ns5.4 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time29 ns29 ns-
Typical Turn On Delay Time5.8 ns5.8 ns-
Part # AliasesBSS139 BSS139H6327XTSA1 H6327 SP000702610BSS139 BSS139H6327XT H6327 SP000702610-
Unit Weight0.000282 oz0.000212 oz-
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
BSS139H6327XT MOSFET N-Ch 250V 30mA SOT-23-3
BSS139H6327XTSA1 MOSFET N-Ch 250V 30mA SOT-23-3
BSS139H6327XTSA1 MOSFET N-CH 250V 100MA SOT23
BSS139H6327 250V,0.03A,30��,N-Ch Power MOSFET
BSS139H6327XTSA1-CUT TAPE 신규 및 오리지널
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