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| PartNumber | BSS64AT116 | BSS64E6327 | BSS64T116 |
| Description | Bipolar Transistors - BJT TRANSISTOR FOR HIGH VOLT AMP | Small Signal Bipolar Transistor, 0.8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | BSS64 IS A SOT-23 PACKAGE TRANSI |
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Collector Base Voltage VCBO | 120 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 80 mV | - | - |
| Maximum DC Collector Current | 200 mA | - | - |
| Gain Bandwidth Product fT | 140 MHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 30 | - | - |
| Packaging | Reel | - | - |
| Brand | ROHM Semiconductor | - | - |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 30 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| BSS64AT116 | Bipolar Transistors - BJT TRANSISTOR FOR HIGH VOLT AMP | ||
| BSS64E6327 | Small Signal Bipolar Transistor, 0.8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | ||
| BSS64T116 | BSS64 IS A SOT-23 PACKAGE TRANSI | ||
| BSS64AT116 | TRANS 100V 100A SOT-23 | ||
ON Semiconductor |
BSS64LT1G | Bipolar Transistors - BJT 100mA 120V NPN | |
| BSS64LT1 | Bipolar Transistors - BJT 100mA 120V NPN | ||
| BSS64LT1 | TRANS NPN 80V 0.1A SOT-23 | ||
| BSS64LT1G | Bipolar Transistors - BJT 100mA 120V NPN | ||
Infineon Technologies |
BSS670S2LH6327XT | MOSFET N-Ch 55V 540mA SOT-23-3 | |
| BSS670S2L H6327 | MOSFET N-Ch 55V 540mA SOT-23-3 | ||
| BSS670S2LH6327XTSA1 | MOSFET N-Ch 55V 540mA SOT-23-3 | ||
| BSS670S2LH6433XTMA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSS670S2L | MOSFET N-CH 55V 540MA SOT-23 | ||
| BSS670S2L H6327 | Trans MOSFET N-CH 55V 0.54A Automotive 3-Pin SOT-23 T/R | ||
| BSS670S2LH6327XT | MOSFET N-Ch 55V 540mA SOT-23-3 | ||
| BSS670S2LH6327XTSA1 | MOSFET N-CH 55V 540MA SOT23 | ||
| BSS670S2LH6433XTMA1 | MOSFET N-CH 55V 540MA SOT23 | ||
| BSS64_Q | Bipolar Transistors - BJT NPN Transistor General Purpose | ||
| BSS64.215 | Transistor: NPN, bipolar, 80V, 100mA, 250mW, SOT23 | ||
| BSS64-RTK | 신규 및 오리지널 | ||
| BSS64/AT | 신규 및 오리지널 | ||
| BSS64215 | Now Nexperia BSS64 - Small Signal Bipolar Transistor, 0.1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | ||
| BSS644 | 신규 및 오리지널 | ||
| BSS64LT1/AM | 신규 및 오리지널 | ||
| BSS64R | 신규 및 오리지널 | ||
| BSS64R /U6 | 신규 및 오리지널 | ||
| BSS64TA | Bipolar Transistors - BJT | ||
| BSS64TA , TFZFH13B , CMK | 신규 및 오리지널 | ||
| BSS64TC | Bipolar Transistors - BJT | ||
| BSS64TRL | 신규 및 오리지널 | ||
| BSS64TRL , TFZFH16B , CD | 신규 및 오리지널 | ||
| BSS65 | 신규 및 오리지널 | ||
| BSS65 , MAX6388XS29D1 | 신규 및 오리지널 | ||
| BSS65R | 신규 및 오리지널 | ||
| BSS65TA | Bipolar Transistors - BJT | ||
| BSS66R | 신규 및 오리지널 | ||
| BSS66RTA | 신규 및 오리지널 | ||
| BSS66TA | Bipolar Transistors - BJT | ||
| BSS67 | 신규 및 오리지널 | ||
| BSS670S2L L6327 | 신규 및 오리지널 | ||
| BSS670S2L E6327 | 신규 및 오리지널 | ||
| BSS670S2L6327 | 신규 및 오리지널 | ||
| BSS670S2LE6327 | 신규 및 오리지널 | ||
| BSS670S2LH6327 | 55V,540MA,N-channel Power MOSFET | ||
| BSS670S2LH6327 , MAX6383 | 신규 및 오리지널 | ||
| BSS670S2LH6327. | 신규 및 오리지널 | ||
| BSS670S2LH6327/SN | 신규 및 오리지널 | ||
| BSS670S2LH6327XTSA1-CUT TAPE | 신규 및 오리지널 | ||
| BSS66 | 신규 및 오리지널 | ||
Nexperia |
BSS64,215 | TRANS NPN 80V 0.1A SOT23 |