 | | | |
| PartNumber | BSZ520N15NS3 G | BSZ520N15NS3GATMA1 | BSZ900N15NS3 G |
| Description | MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | PG-TSDSON-8 | TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | 150 V | 150 V |
| Id Continuous Drain Current | 21 A | 21 A | 13 A |
| Rds On Drain Source Resistance | 42 mOhms | 52 mOhms | 74 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 10 V | 20 V |
| Qg Gate Charge | 12 nC | 8.7 nC | 7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 57 W | 57 W | 38 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 11 S | 11 S | 6 S |
| Fall Time | 3 ns | 3 ns | 3 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns | 5 ns | 4 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 10 ns | 10 ns | 8 ns |
| Typical Turn On Delay Time | 7 ns | 7 ns | 4 ns |
| Part # Aliases | BSZ520N15NS3GATMA1 BSZ52N15NS3GXT SP000607022 | BSZ520N15NS3 BSZ52N15NS3GXT G SP000607022 | BSZ900N15NS3GATMA1 BSZ9N15NS3GXT SP000677866 |
| Unit Weight | 0.003527 oz | 0.007055 oz | 0.003527 oz |
| Tradename | - | OptiMOS | OptiMOS |
| Series | - | OptiMOS 3 | OptiMOS 3 |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ520N15NS3 G | MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3 | |
| BSZ900N20NS3 G | MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3 | ||
| BSZ900N20NS3GATMA1 | MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3 | ||
| BSZ520N15NS3GATMA1 | MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3 | ||
| BSZ900N15NS3GATMA1 | MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3 | ||
| BSZ900N15NS3 G | MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3 | ||
| BSZ520N15NS3GATMA1 | MOSFET N-CH 150V 21A 8-TSDSON | ||
| BSZ900N15NS3GATMA1 | MOSFET N-CH 150V 13A TDSON-8 | ||
| BSZ900N20NS3GATMA1 | MOSFET N-CH 200V 15.2A 8TSDSON | ||
| BSZ520N15NS3G | POWER FIELD-EFFECT TRANSISTOR, 21A I(D), 150V, 0.052OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| BSZ520N15NS3GXT | Trans MOSFET N-CH 150V 21A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ520N15NS3GATMA1) | ||
| BSZ520N15NSS | 신규 및 오리지널 | ||
| BSZ55-B5V1 VISHAY | 신규 및 오리지널 | ||
| BSZ6-SS-105L | 신규 및 오리지널 | ||
| BSZ6-SS-112L | 신규 및 오리지널 | ||
| BSZ6-SS-112LM | 신규 및 오리지널 | ||
| BSZ900N15NS3 G | Trans MOSFET N-CH 150V 13A 8-Pin TSDSON EP | ||
| BSZ900N15NS3G | 신규 및 오리지널 | ||
| BSZ900N20NS3 G | Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP (Alt: BSZ900N20NS3 G) | ||
| BSZ900N20NS3G | 신규 및 오리지널 | ||
| BSZ520N15NS3 G | IGBT Transistors MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3 |