BULD1

BULD118D-1 vs BULD128DT4

 
PartNumberBULD118D-1BULD128DT4
DescriptionBipolar Transistors - BJT PTD HIGH VOLTAGEBipolar Transistors - BJT PWR BIP/S.SIGNAL
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYY
Mounting StyleThrough HoleSMD/SMT
Package / CaseTO-251-3-
Transistor PolarityNPNNPN
ConfigurationSingle-
Collector Emitter Voltage VCEO Max400 V-
Collector Base Voltage VCBO700 V-
Emitter Base Voltage VEBO9 V-
Maximum DC Collector Current2 A-
Minimum Operating Temperature- 65 C-
Maximum Operating Temperature+ 150 C-
SeriesBULD118DBULD128
Height6.2 mm-
Length6.6 mm-
Width2.4 mm-
BrandSTMicroelectronicsSTMicroelectronics
Pd Power Dissipation20000 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity30002500
SubcategoryTransistorsTransistors
Unit Weight0.012102 oz-
Packaging-Reel
제조사 부분 # 설명 RFQ
STMicroelectronics
STMicroelectronics
BULD118D-1 Bipolar Transistors - BJT PTD HIGH VOLTAGE
BULD128DT4 Bipolar Transistors - BJT PWR BIP/S.SIGNAL
BULD128DT4 Bipolar Transistors - BJT PWR BIP/S.SIGNAL
BULD118D-1 Bipolar Transistors - BJT IGBT & Power Bipola
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BULD1101E-1 신규 및 오리지널
BULD1101ET4 Bipolar Transistors - BJT Hi Vltg Fast Swtchng NPN Pwr Transisto
BULD118 신규 및 오리지널
BULD1180B 신규 및 오리지널
BULD118D 신규 및 오리지널
BULD118D1 신규 및 오리지널
BULD118DB Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA, Plastic/Epoxy, 3 Pin
BULD125 신규 및 오리지널
BULD128D 신규 및 오리지널
BULD128DT4G 신규 및 오리지널
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