BUT3

BUT30V vs BUT30 vs BUT312

 
PartNumberBUT30VBUT30BUT312
DescriptionBipolar Transistors - BJT NPN Power Module
ManufacturerSTMicroelectronics--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseISOTOP--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max125 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage700 mV--
Maximum DC Collector Current150 A--
Maximum Operating Temperature+ 150 C--
SeriesBUT30V--
PackagingTube--
BrandSTMicroelectronics--
Continuous Collector Current100 A--
DC Collector/Base Gain hfe Min27--
Pd Power Dissipation250 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Unit Weight1 oz--
제조사 부분 # 설명 RFQ
STMicroelectronics
STMicroelectronics
BUT30V Bipolar Transistors - BJT NPN Power Module
BUT30V Bipolar Transistors - BJT NPN Power Module
BUT30 신규 및 오리지널
BUT312 신규 및 오리지널
BUT32 신규 및 오리지널
BUT32V TRANSISTOR, NPN, 300V, ISOTOP
BUT33 신규 및 오리지널
BUT34 신규 및 오리지널
BUT35 신규 및 오리지널
BUT36 신규 및 오리지널
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