BUZ111S

BUZ111S vs BUZ111SE045A vs BUZ111SE3045

 
PartNumberBUZ111SBUZ111SE045ABUZ111SE3045
DescriptionPower Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABPower Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ManufacturerINF--
Product CategoryIC Chips--
제조사 부분 # 설명 RFQ
BUZ111SLE3045A Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
BUZ111S Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUZ111SE045A 신규 및 오리지널
BUZ111SE3045 Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
BUZ111SE3045A Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
BUZ111SL MOSFET Transistor, N-Channel, TO-220AB
BUZ111SL-E3045 신규 및 오리지널
BUZ111SL-E3045A Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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