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| PartNumber | BUZ30AH3045AATMA1 | BUZ30AH3045A |
| Description | MOSFET N-Ch 200V 21A D2PAK-2 | Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| Manufacturer | Infineon | INFINEON |
| Product Category | MOSFET | FETs - Single |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TO-263-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | - |
| Id Continuous Drain Current | 21 A | - |
| Rds On Drain Source Resistance | 100 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | - | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 125 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | SIPMOS | - |
| Packaging | Reel | - |
| Height | 15.65 mm | - |
| Length | 10 mm | - |
| Transistor Type | 1 N-Channel | - |
| Width | 4.4 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 6 S | - |
| Fall Time | 90 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 70 ns | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 250 ns | - |
| Typical Turn On Delay Time | 30 ns | - |
| Part # Aliases | BUZ30A BUZ3AH345AXT H3045A SP000736082 | - |
| Unit Weight | 0.139332 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BUZ30AH3045AATMA1 | MOSFET N-Ch 200V 21A D2PAK-2 | |
| BUZ30AH3045AATMA1 | MOSFET N-CH 200V 21A TO-263 | ||
| BUZ30AH3045A | Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |